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| Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 7A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. ESD Protected: 2000 V D1 8 D1 7 CEM8208 5 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C 12 7 25 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 3. 2007.Jan http://www.cetsemi.com CEM8208 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 7A VDS = 10V, ID =7A, VGS = 4.5V VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6 0.34 0.68 3.58 2 4.2 1.0 2.4 1.5 1.2 0.68 1.72 7.16 4 5.6 us us us us nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 7A VDS = 25V, VGS = 0V, f = 1.0 MHz 14 40 115 15 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250A VGS = 4.5V, ID = 7A VGS = 2.5V, ID = 5.6A 0.5 18 24 1.2 22 32 V m m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250A VDS = 40V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 10 -10 V A Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units uA uA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEM8208 15 12 9 6 VGS=4.5,3.5,2.5V 10 25 C 8 6 4 2 0 ID, Drain Current (A) VGS=1.5V 3 0 ID, Drain Current (A) TJ=125 C 0.0 0.5 1.0 -55 C 1.5 2.0 2.5 0 0.2 0.4 0.6 0.8 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 180 150 120 90 60 30 0 Ciss Crss 0 5 10 15 20 25 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=7A VGS=4.5V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250A 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEM8208 VGS, Gate to Source Voltage (V) 5 4 3 2 1 0 VDS=10V ID=7A 10 2 RDS(ON)Limit 1 ID, Drain Current (A) 10 1ms 10ms 100ms 1s DC 4 10 0 10 -1 0 1 2 3 4 5 6 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 10 -1 10 -2 Single Pulse 10 -3 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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